avalanche photodiode nir special characteristics : quantum efficiency > 80 % at 760 - 910 nm high speed, low noise 500 m diameter active area low slope multiplication curve AD500-9 to52s1 parameters : AD500-9 to52s1 active area 0.196 mm 2 ? 500 m dark current 1) (m = 100) max. 5 na typ. 0.5 - 1 na total capacitance 1) (m = 100) typ. 1.2 pf breakdown voltage u br (at i d = 2 a) 120 ? 300 v typ. > 200 v temperature coefficient of u br typ. 1.55 v/k spectral responsivity 1) (at 905 nm, m = 100) min. 55 a/w typ. 60 a/w cut-off frequency (-3db) typ. 0.5 ghz rise time typ. 550 ps optimum gain 50 - 60 max. gain > 200 ?excess noise? factor (m = 100) typ. 2.5 ?excess noise? index (m = 100) typ. 0.2 noise current (m = 100) typ. 1 pa/hz 1/2 n.e.p. (m = 100, 905 nm) typ. 2* 10 -14 w/hz 1/2 operating temperature storage temperature -20 ... +70 c -60 ... +100 c 1) measurement conditions : setup of photo current 10 na at m = 1 and irradiation by an ired (880 nm, 80 nm bandwith). increase the photo current up to 1 a, (m = 100) by internal multiplication due to an increasing bias voltage. package (to52s1): www.silico n - sensor.co m www.pacifi c - sensor.co m version: 05-04-29 specification before: sso-ad-500-9-to52-s1 ? 5.4 0.2 ? 2.54 1 3 4 45 cathode a node case chip: AD500-9 diam. active area: 100 m 1 3 4 view without window cap ? 2.0 min. ? 4.7 0.1 ? 3.0 0.1 0.35 0.2 13 1.0 ? 0.45 0.5 max. 0.4 max. 2.7 0.2 0.9 0.3 3.6 0.2 sensitive surface
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